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  Datasheet File OCR Text:
 SMD Type
PNP Transistors KST8550S
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
Collector current: IC-=0.5A
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -25 -5 -0.5 0.3 150 -55 to 150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE Testconditons IC=-100 A, IE=0 IC=-1mA, IB=0 IE=-100 A, IC=0 VCB=-40V, IE=0 VCE=-20V, IB=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA VCE(sat) IC=-500mA, IB=-50mA VBE(sat) IC=-500mA, IB=-50mA fT VCE= -6V, IC= -20mA,f=30MHz 150 120 50 -0.5 -1.2 V V MHz Min -40 -25 -5 -0.1 -0.1 -0.1 350 Typ Max Unit V V V A A A
hFE Classification
Marking Rank hFE L 120 200 2TY H 200 350
+0.1 0.38-0.1
0-0.1
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1
SMD Type
KST8550S
Typical Characteristics
Transistors
Fig.1 Static Characteristic
Fig.2 DC Current Gain
Fig.3 Bacse-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Fig.4 Current Gain Bandwidth Product
2
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